INTRODUCING  |  A revolutionary 1200V 15A fully integrated half-bridge high-side switch  
INTRODUCING  
  A revolutionary 1200V 15A fully integrated half-bridge high-side switch
INTRODUCING
A revolutionary 1200V 15A fully integrated half‑bridge high‑side switch

16SCT001

1200V Direct-Coupled FET IGBT Gate Driver

The 16SCT001E is a high-voltage (1200V max) direct coupled MOSFET / IGBT gate driver typically used in systems requiring the ability to control the conduction state of a high-voltage (HV) MOSFET / IGBT switch. The chip has built-in circuitry to drive the MOSFET / IGBT gate above the HV supply to ensure that the transistor is adequately saturated.

Features

  • Maximum Blocking Voltage. . . 1200 V
  • Zero External Components
  • Direct Drive From Low-Voltage Control Signals
  • MOSFET / IGBT Gate-Emitter Overdrive Circuitry
  • Fast IGBT Turn-On & Turn-Off Times
  • Low HV Current
  • Ultra-Low Idle Current

Typical Application:

Available at:

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